The characteristics of electron-stimulated reactions of defects, in a semiconductor with the asymmetrical (relative to the center of the band-gap) electronic spectrum of a broken valence bond, were analyzed on the basis of a theoretical scheme for the description of electron-stimulated defect reactions. The results which were obtained agreed with existing data on the electronic structures and mobility of dislocations. It was predicted that the effect of non-equilibrium carriers upon the slip velocity of dislocation in Ge would be observable in highly-doped p-type material, or under conditions of high excitation.

V.V.Sviridov: Fizika Tverdogo Tela, 1995, 37[10], 3097-107 (Physics of the Solid State, 1995, 37[10], 1707-12)