The generation of dislocations, and their initial growth mechanism, were investigated in (InAs)1(GaAs)1 strained short-period superlattices, on a GaAs (001) substrate, under atomic H bombardment. It was found that a 2-dimensional growth mode persisted, even after lattice relaxation, for growth at 350C. On the other hand, the growth mode changed from 2-dimensional to 3-dimensional without atomic H bombardment. The threading dislocation density was markedly reduced, and the critical thickness was markedly increased, by atomic H bombardment. Misfit dislocations which propagated along the <110> and <100> directions were generated at the hetero-interface. Such defects disappeared for growth at 500C, where atomic H atoms desorbed from the growing surface. It was also found that 3-dimensional growth was more effectively suppressed in the growth of (InAs)1(GaAs)1 short-period superlattices, than in an In0.50Ga0.50As alloy (which had the same average In composition as that of the short-period superlattices).

M.Yokozeki, H.Yonezu, T.Tsuji, N.Ohshima, K.Pak: Japanese Journal of Applied Physics, 1996, 35[1-5A], 2561-5