Samples which had been implanted with 200keV Fe ions to a dose of 1014/cm2 were investigated by means of transmission electron microscopy. The as-implanted samples exhibited an amorphous surface region. At an annealing temperature of 650C, almost complete solid-phase re-growth was obtained upon annealing for more than 1.5h. After annealing for 2h, the samples still contained vacancy-type stacking fault tetrahedra and interstitial-type dislocation loops. Most of these were concentrated into a band which corresponded to the transition region between the amorphous top layer and the crystalline substrate. Stacking-fault tetrahedra and loops were also observed above and below this band, respectively.

C.Frigeri, A.Carnera, A.Gasparotto: Applied Physics A, 1996, 62[1], 65-72