A 10mm-thick InGaSb crystal was grown onto an InSb seed by using the rotary Bridgman method. It was found that Ga diffused rapidly into the seed and displaced some of the In. The apparent Ga diffusion coefficient was between 10-8 and 10-7cm2/s. These values were much higher than the self-diffusion coefficients of In or Sb. Rapid diffusion occurred only when the substrate was in contact with the solution. The diffusion distance of Ga increased upon increasing the holding temperature or time.

Y.Hayakawa, E.Hamakawa, T.Koyama, M.Kumagawa: Journal of Crystal Growth, 1996, 163, 220-5