The local atomic environment of Sb dopants, in samples which had been implanted to 2 x 1016 or 5 x 1016/cm2, was studied by using near-grazing incidence fluorescence extended X-ray absorption fine structure techniques at various stages of the Sb deactivation process. Annealing was performed, at temperatures of between 900 and 1000C, for times of 30s to 4h. The occurrence of Sb out-diffusion, and a high volume of Sb precipitates, were revealed; especially in the case of samples which had been implanted only with Sb. A comparison of Sb and B co-diffusion data, with corresponding results for the diffusion of Sb alone, revealed several anomalous effects that were due to dopant interaction. A simulation program which took account of dopant precipitation and donor-acceptor pairing permitted the prediction of most of the anomalous phenomena that occurred in high-concentration co-diffusion experiments.

C.Revenant-Brizard, J.R.Regnard, S.Solmi, A.Armigliato, S.Valmorri, C.Cellini, F.Romanato: Journal of Applied Physics, 1996, 79[12], 9037-42