It was demonstrated that a periodic exposure to zero bias during the  in situ  hydrogenation of reverse-biased p-type Schottky barrier structures had marked effects upon H penetration. The H influx could be slowed, or even stopped, by such treatments. On the other hand, similar pulsing techniques produced almost no change in the penetration of n-type barriers during hydrogenation. The latter observation contrasted sharply with the expectation that charge conversion from H+ to H- would reverse the drift of the H species. It was suggested that these effects were caused by the charge conversion of relatively immobile H-related defects. In the case of p-type barriers, this resulted in a weakening or reversal of the near-surface electric field, thus effectively stopping the drift of H+ into the bulk.

C.H.Seager, R.A.Anderson: Journal of Applied Physics, 1996, 80[1], 151-5