The temperature dependence of the ion beam-induced interfacial amorphization process was investigated, at temperatures above 90K, by means of Rutherford back-scattering spectrometry and channelling, plus cross-sectional transmission electron microscopy. Three regimes were observed. At temperatures above about 320K, there was a strong temperature dependence of the ion beam-induced interfacial amorphization rate (thermal regime). At lower temperatures, the rate increased towards a saturation value (transition regime). At temperatures below about 150K, the ion beam-induced interfacial amorphization was almost temperature-independent (ballistic regime). This low-temperature regime could be explained in terms of an athermal transport of point defects; as in ballistic mixing processes.

T.Henkel, V.Heera, R.Kögler, W.Skorupa, M.Seibt: Applied Physics Letters, 1996, 68[24], 3425-7