Samples were bombarded with 16.2MeV Au4 and 23MeV C60 cluster ions. Following bombardment, Schottky diodes were formed and the samples were studied by means of deep-level transient spectroscopy. It was found that the majority carrier spectra of bombarded n-type material were dominated by the single charge state of the di-vacancy (0.42eV). The measured depth distributions of the di-vacancy suggested that the peak elastic energy deposition occurred at the same depth for Au4, as for Au ions with one quarter of the energy. A comparison with vacancy distributions also showed that the deep tail of the di-vacancy defect distribution extended to greater depths. It was concluded that di-vacancies were created not only by direct collision, but also by the diffusion and pairing of 2 single vacancies.

A.Hallen, P.Hakansson, N.Keskitalo, J.Olsson, A.Brunelle, S.Della-Negra, Y.Le Beyec: Nuclear Instruments and Methods in Physics Research B, 1995, 106[1-4], 233-6