A review was presented of recent work in which deep-level transient spectroscopy had been used to study point defects in crystalline material that had been implanted with H, B, C, O, Si, Ge or Sn ions (0.4 to 0.8MeV) to doses of between 107 and 1010/cm2. Various intrinsic and impurity-related defects, such as di-vacancy and vacancy-O centers were identified and their formation was studied as a function of the dose rate, sample depth, implantation temperature and ion mass. Recombination between vacancies and Si self-interstitials was found to play a major role, and only a few percent of the generated vacancies formed stable defects. In contrast to the damage accumulation at doses above about 1012/cm2, the production of vacancy-type defects increased with increasing implantation temperature and decreased with increasing dose rate. These effects were attributed to an enhanced vacancy annihilation by overlapping Si self-interstitials from adjacent ion tracks.

B.G.Svensson, C.Jagadish, A.Hallen, J.Lalita: Nuclear Instruments and Methods in Physics Research B, 1995, 106[1-4], 183-90