The formation of Si-Ne lattice clathrate compounds during the irradiation of monocrystalline material with Ne+ ions to ultra-high doses was studied. The Ne concentration was deduced from Ne effusion experiments and Auger spectra. The Ne concentration was close to the density of crystalline Ne. It was concluded that the formation and accumulation of vacancy-type defects during irradiation first resulted in the amorphization of the Si, followed by the formation of a stable lattice clathrate compound, SixNey, with the voids filled with Ne atoms in amorphous Si. A transition to a ferromagnetic state of the Si dangling bond, at ultra-high Ne doses, was proposed.

A.F.Khokhlov, A.A.Ezhevskii, A.I.Mashin, D.A.Khokhlov: Fizika i Tekhnika Poluprovodnikov, 1995, 29[12], 2113-21 (Semiconductors, 1995, 29[12], 1101-5)