The reduction of secondary defects in samples which had been implanted with 50keV P ions was studied by using Rutherford back-scattering and channelling techniques. It was found that the secondary defects in the P-damaged region were reduced by MeV Si ion bombardment. In the case of low-dose P ion implantation, the reduction in pre-amorphization defects was less sensitive to the MeV Si ion dose.

Q.Zhao, Z.Wang: Nuclear Instruments and Methods in Physics Research B, 1996, 108[1-2], 81-4