A computationally efficient and accurate depth-profiling model was presented for B implantation through a thin (less than 50nm) oxide layer into monocrystalline material. This was the first model to take account of the effects of oxide thickness, implantation energy, dose, tilt angle and rotation angle. The detailed effects of thin oxide layers upon the tilt and rotation angles, as well as the dose and energy dependences of the B profiles, were studied. It was shown that this model could accurately predict the profile dependences; including a subtle and unexpected behavior of the implant profiles under certain conditions.

S.J.Morris, S.H.Yang, D.H.Lim, C.Park, K.M.Klein, M.Manassian, A.F.Tasch: IEEE Transactions on Semiconductor Manufacturing, 1995, 8[4], 408-12