A photoluminescence study was made of O-rich Czochralski material that had been subjected to Be ion implantation and annealing. A characteristic bound-exciton luminescence spectrum was observed, with a narrow zero-phonon line at 1.13798eV (BeA), which was accompanied by a vibrational side-band that extended by more than 0.200eV from the zero-phonon line and contained lattice-related and defect-related vibrational modes. The spectrum was not observed in O-poor float-zone material, except when Be and O were co-implanted. The response of the luminescence system to perturbations such as temperature, uniaxial stresses and magnetic fields was considered. The defect structure was found to have rhombic symmetry, and the absence of splitting in a magnetic field indicated that the line was a magnetic singlet. The data were explained in terms of a pseudo-donor model.

S.E.Daly, M.O.Henry, K.G.McGuigan, M.C.Do Carmo: Semiconductor Science and Technology, 1996, 11[7], 996-1001