The effect of Si+ implantation upon the defect concentration, Urbach parameter and position of the Fermi level in amorphous hydrogenated material was studied. It was found that, as the implantation dose was increased, the defect concentration reached saturation at about 1017/cm3, while the Urbach parameter increased. The implantation did not affect the Fermi level of so-called intrinsic amorphous hydrogenated material.

O.A.Golikova, K.J.Mavlyanov, I.N.Petrov, R.R.Yafaev: Fizika i Tekhnika Poluprovodnikov, 1995, 29[4], 577-81 (Semiconductors, 1995, 29[4], 299-301)