An investigation was made of the electrical characteristics of p+-n junction diodes that had been implanted with 300keV C ions to fluences of 5 x 1014 or 1015/cm2, and annealed at 900 or 1100C. In each case, cross-sectional transmission electron microscopy revealed excellent crystalline quality; with no extended defects. The C-rich region was characterized by n-type doping. In material which was annealed at 900C, the C-rich region exhibited a low electron mobility and the presence of deep donor levels. These effects were attributed to the presence of C-Si self-interstitial complexes after 900C annealing. At 1100C, some of the C-Si complexes dissolved and the electrical characteristics improved.

S.Lombardo, A.Cacciato, K.K.Larsen, V.Raineri, F.La Via, V.Privitera, S.U.Campisano: Journal of Applied Physics, 1996, 79[7], 3464-9