The defects which were introduced by the through-oxide implantation of As were studied by using thermal desorption spectroscopy, after H adsorption at the defects. The thermal desorption spectroscopic peaks which were observed at 350 and 540C were attributed to the desorption of H when di-vacancies recovered and when recrystallization occurred. The results confirmed that thermal desorption spectroscopy was a useful tool for investigating the annealing behavior of implanted defects.

K.Saito, Y.Sato, N.Yabumoto, Y.Homma: Japanese Journal of Applied Physics, 1996, 35[1-2A], 589-90