Monocrystals of O-rich Czochralski material were investigated, after scratching and plastic deformation, in order to generate dislocation networks. The electrical effects of dislocations were verified by means of light-induced current maps at various wavelengths, and deep-level transient spectroscopy. The maps were correlated with X-ray topography and with etch-pit distributions. The recombination strength of the dislocations was found to be higher in O-rich samples.

J.J.Simon, I.Perichaud: Materials Science and Engineering B, 1996, 36[1-3], 183-6