Studies of interactions between point defects (introduced during semiconductor processing) and dislocation loops were reviewed. The processing steps which were studied included oxidation, ion implantation and silicidation. By using doped marker layers, it was shown that the interaction kinetics of point defects and dislocation loops were strongly diffusion-limited. It was also shown that these dislocation loops could be used to measure quantitatively the flux of point defects which was introduced. This provided a novel means for improving understanding of the process of defect injection, as well as the effect which these dislocations had upon excess point defect concentrations.

K.S.Jones, H.G.Robinson, J.Listebarger, J.Chen, J.Liu, B.Herner, H.Park, M.E.Law, D.Sieloff, J.A.Slinkman: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 196-201