The thermal annealing activation of defects which resulted from the H treatment of wafer samples in an electron cyclotron resonance plasma system were studied. After low-temperature hydrogenation (240s to 0.2h), the n-type or p-type wafers were annealed (300 to 750C, 1200s). Whereas only a small broad peak was seen straight after hydrogenation, several clear trap levels were revealed by the deep-level transient spectroscopy of samples which had been annealed at temperatures above 450C. The concentration of these deep levels reached a maximum at an annealing temperature of about 500C, and fell markedly at annealing temperatures above 750C. This behavior was attributed to the presence of O.

C.W.Nam, A.Tanabe, S.Ashok: Materials Science and Engineering B, 1996, 36[1-3], 255-8