Self-interstitial and vacancy diffusion equations which took account of the sinks and sources for these point defects were studied analytically in the steady state; assuming local equilibrium between the defects. It was noted that the behavior of the defects at the bulk surface was a necessary boundary condition. It was found that the exact steady-state solutions depended upon the specimen thickness. By applying the solutions to the case of dislocation-free Si, the times at which self-interstitials or vacancies reached the steady-state were determined.

T.Okino, T.Shimozaki, R.Takaue, H.Onishi: Japanese Journal of Applied Physics, 1995, 34[1-12A], 6298-302