The time-dependent deactivation of rapid thermal annealing-activated As-doped samples was studied in homogeneously doped material, using concentrations of between 2 x 1020 and 1021/cm3, and temperatures of between 700 and 900C. The dependence of the active concentration (after long-term annealing) upon the total concentration indicated that the deactivation behavior could be described by a simple cluster law. It had been reported that, even at low concentrations, the electron concentration was markedly below the total As concentration. This was attributed to pair formation between As atoms and intrinsic point defects.

H.Bauer, P.Pichler, H.Ryssel: IEEE Transactions on Semiconductor Manufacturing, 1995, 8[4], 414-8