Infra-red light-scattering tomography was used to study wafer samples. Substrates of Czochralski-type n-type or p-type material, with initial O concentrations of between 7 x 1017 and 1.1 x 1018/cm3, were used. Extended secondary defects, such as stacking faults together with their surrounding Frank loop and prismatic punching systems, were identified directly. Correlations between the defect densities for various defect sizes, the initial concentration of interstitial O and the loss of interstitial O, showed that the concentrations and sizes of as-grown nuclei markedly affected defect generation.

G.Kissinger, J.Vanhellemont, E.Simoen, C.Claeys, H.Richter: Materials Science and Engineering B, 1996, 36[1-3], 225-9