Requirements for the diffusion coefficients and equilibrium densities of self-interstitials and vacancies in a crystal sample were derived from macroscopic experimental data. It was shown that the combination of diffusion coefficients and equilibrium densities which satisfied the above requirements, with phenomenological diffusion equations which had been proposed previously, could furnish diffusion profiles of self-interstitials and vacancies. The latter agreed well with the distributions of grown-in crystal defects which were observed in a dislocation-free Czochralski-grown monocrystal. The calculated results could explain the movement of oxidation-induced stacking-fault rings as a function of crystal growth rate, and the formation of a radial distribution of micro-defects in a Czochralski wafer.

R.Habu, A.Tomiura: Japanese Journal of Applied Physics, 1996, 35[1-1A], 1-9