Molecular beam homo-epitaxy on H-terminated (111)-(1 x 1) surfaces was studied by means of high-resolution low-energy electron diffraction. The occurrence of exponentially decaying low-energy electron diffraction intensity oscillations reflected the formation of an increasingly rough growth front during deposition. At temperatures below 480C, bulk defects were generated which finally led to non-crystallinity. The marked effect of H, even at sub-monolayer coverages, upon the growth behavior was attributed to the high binding energy (3.1eV) of the H-Si bond. This hindered exchange processes during growth.

M.Horn-von Hoegen, A.Golla: Surface Science, 1995, 337, L777-82