Rutherford back-scattering spectrometry and channelling methods, using 1.9 to 3.7MeV He2+ ions, were applied to the study of ion-beam deposited epitaxial Si/CoSi2/(111)Si samples. Under channelling conditions, the back-scattering yield from Co atoms at the bulk Si/CoSi2 interface exhibited a linear dependence. This energy dependence was attributed to the presence of misfit dislocations. The dislocation density was found to be equal to 4.5 x 105/cm. The back-scattering yield from Co atoms at the interface between the CoSi2 and the upper Si epitaxial layer exhibited a different energy dependence, but misfit dislocations were also expected to exist at this interface.

P.V.Satyam, K.Sekar, G.Kuri, B.Sundaravel, D.P.Mahapatra, B.N.Dev: Philosophical Magazine Letters, 1996, 73[6], 309-17