The dangling-bond spin relaxation times in H-doped alloys were determined, by using pulsed electron spin resonance techniques, as a function of composition and temperature. Two spin lattice relaxation components were detected, over a wide composition range, in saturation recovery measurements. The 2 components were attributed to Si- and Ge- dangling-bond states. It was found that the respective relaxation times which, in the pure alloys, differed by 2 orders of magnitude due to the difference in the spin orbit coupling of Si and Ge, both changed gradually with alloy composition but maintained largely different values in the alloys. The relaxation times decreased as the inverse square of the temperature.

C.Malten, E.Finger, H.Wagner: Solid State Communications, 1996, 99[7], 503-7