The low-temperature (40K) cathodoluminescence of epitaxial ZnCdSe films, grown via metalorganic chemical vapor deposition onto (100) GaAs substrates and annealed in a H plasma, was studied. An approximately 50% narrowing of the short-wavelength emission line-width, and an increase in its intensity, were observed with respect to untreated samples. These effects were attributed to partial H passivation of structural defects in the epitaxial film.

V.I.Kozlovskii, A.B.Krysa, P.I.Kuznetsov: Fizika Tverdogo Tela, 1995, 37[12], 3558-654 (Physics of the Solid State, 1995, 37[12], 1960-3)