Molecular statics methods, in the Mott-Littleton approximation for defects in ionic crystals, were used to calculate the energy barriers to O ion migration within, and between, metal-O planes. The minimum intra-plane barrier was found for the migration of vacancies in a Cu-O layer.

N.V.Moseev: Fizika Tverdogo Tela, 1995, 37[10], 2987-90 (Physics of the Solid State, 1995, 37[10], 1646-7)