The effect of Ar ion implantation upon defect generation in oxide/semiconductor structures was studied by using electroluminescence techniques. Bands at 1.9, 2.7 and 4.3eV were identified and were related to various intrinsic defects in the oxide. Structural analyses of irradiated oxide films, performed by means of infra-red spectroscopy, indicated that atomic displacements and broken Si-O bonds were at the origin of the damage that was produced by implantation.

S.Bota, B.Garrido, J.R.Morante, A.Baraban, P.P.Konorov: Solid-State Electronics, 1996, 39[3], 355-9