Deep-level defects, and their role in carrier recombination processes in electron-irradiated 3C-type material, were studied by using photoluminescence and optically detected magnetic resonance techniques. An isotropic resonance spectrum, with a g-value of 2.0061 and an effective electron spin of S = ½, was observed in irradiated films. From the spectral dependence of the resonance signal, the defect was deduced to be a deep-level center that was related to a radiation-induced photoluminescence band with a zero-phonon line at 1.121eV. Due to a competition between various carrier recombination channels, this optically detected magnetic resonance spectrum could also be observed as a decrease in photoluminescence emissions; thus indicating its predominant role in recombination processes.

N.T.Son, E.Sörman, W.M.Chen, M.Singh, C.Hallin, O.Kordina, B.Monemar, E.Janzén, J.L.Lindström: Journal of Applied Physics, 1996, 79[7], 3784-6