Microstructural changes during diffusion-induced recrystallization on the [011] surface of single crystals were studied. The selected area channelling technique was used to measure the orientation of grains in the polycrystalline layer which formed by Zn diffusion from the vapor phase. The misorientation of adjacent grains was determined, in terms of rotation angle and axis, by using a direct matrix method. It was found that the fraction of low-angle boundaries increased with annealing time during diffusion-induced recrystallization. The number of low-angle boundaries was related to the fraction of grains with a (114) texture. The fraction of grain boundaries with coincidence misorientation remained roughly the same during diffusion-induced recrystallization.

C.Mayer, V.Sursaeva, B.Straumal, W.Gust, L.Shvindlerman: Physica Status Solidi A, 1995, 150[2], 705-13