The rapid growth of grains with an homogeneous composition and a  = 13 orientation was observed in monocrystalline thin films during annealing at 400C. The grain growth occurred via a diffusion-induced boundary migration mechanism, and the migration velocity was greater than 10-7m/h. It was suggested that the migration involved transitions of an atomic group that was determined by a coincidence site lattice. Reconstruction was assumed to occur via the correlated displacements of a number of atoms which resulted in the transfer of another number of atoms from one grain to another.

V.M.Kosevich, V.N.Klimenko, A.N.Gladkikh, M.V.Karpovski: Interface Science, 1995, 3[2], 151-7