It was noted that irradiation-induced charging of wide band-gap materials could significantly affect the development of radiation damage and associated defect migration. Charge which was trapped at irradiation-induced and/or pre-existing defects induced a localized electric field within the irradiated volume of the specimen. A combination of cathodoluminescence microanalysis and electric force microscopy permitted direct monitoring of the development of the irradiation-induced charge distribution and its effect upon the microscopic spatial segregation of defects. These techniques were used to demonstrate the important effect of the induced local field upon the microscopic defect structure of quartz.

Charge Trapping and Defect Segregation in Quartz. M.A.S.Kalceff, G.J.Thorogood, K.T.Short: Journal of Applied Physics, 1999, 86[1], 205-8