It was recalled that these materials were used as diffusion barriers between Cu and Si. It was found that as-deposited TiW films formed a body-centered cubic structure, while TiW(N) films formed a face-centered cubic structure. Assemblies of the form, Cu/TiW(60nm)/Si, remained intact during rapid thermal annealing (750C, 30s) in N2. At 775C, the Cu diffused through the TiW layer to form Cu3Si, with an over-layer of Ti-W-Si on the surface. Assemblies of the form, Cu/TiW(N)(60nm)/Si, were stable during rapid thermal annealing (1000C, 30s) in N2.

J.C.Chiou, K.C.Juang, M.C.Chen: Journal of the Electrochemical Society, 1995, 142[7], 2326-31