A study was made of the effect, of an hydrostatic pressure during annealing, upon the intensity of the visible photoluminescence from thermally grown films that had been bombarded with Si+ ions. Post-implantation annealing was carried out in an Ar ambient at temperatures of 400 and 450C for 10h, or at 1130C for 5h, under hydrostatic pressures of 1bar to 15kbar. It was found that the intensity of the 360, 460 and 600nm photoluminescence peaks increased with increasing hydrostatic pressure during low-temperature annealing. The intensity of the short-wavelength photoluminescence, under conditions of hydrostatic pressure, continued to increase even at 1130C. Increasing the annealing temperature led to a shift in the photoluminescence spectra towards the ultra-violet range. The results were explained in terms of an enhanced pressure-mediated formation of =Si-Si= centres and small Si clusters within metastable regions of the ion-implanted oxide.

The Effect of Annealing under Hydrostatic Pressure on the Visible Photoluminescence from Si+-Ion Implanted SiO2 Films. I.E.Tyschenko, L.Rebohle, R.A.Yankov, W.Skorupa, A.Misiuk, G.A.Kachurin: Journal of Luminescence, 1998, 80[1-4], 229-33