A simple model was proposed for the description of the diffusion of group-II acceptors, in III-V semiconducting compounds, in terms of reaction-diffusion equations. This made it possible to calculate the concentration profiles of acceptors, and other point defects, at the same time. It was found that it was the effect of the solubility limit of dopants that was responsible for the typical box-like shape of profiles which exhibited a characteristic plateau.

E.Antoncik: Physica Status Solidi A, 1995, 149[1], 557-65