A mathematical model was used to describe the enhancement of semiconductor self-diffusion by an impurity. The model was based upon the kick-out mechanism, and it was assumed that both the impurity and the host diffused via this process. By using the multiple scale approach, the behavior of the system was separated into 2 distinct length scales. Two reduced problems remained to be solved. One was to describe the impurity diffusion, and the other was to describe the intermixing.

J.R.King, T.E.Sharp, B.Tuck, T.G.Rogers: Quarterly Journal of Mechanics and Applied Mathematics, 1995, 48[4], 583-610