A study was made of the effect of hydrostatic pressure, during annealing, upon the intensity of the visible photoluminescence from thermally grown films which had been bombarded with 100 and 200keV Si+ ions to doses ranging from 1.2 x 1016 to 6.3 1016/cm2. Post-implantation annealing was carried out under Ar at temperatures of 400 to 450C, for 10h; both under atmospheric pressure and under hydrostatic pressures of 0.1, 10, 12 or 15kbar. It was found that the intensity of the ultra-violet (360nm), blue (460nm) and red (600nm) photoluminescence emission bands increased with increasing hydrostatic pressure. The results were explained in terms of the enhanced pressure-mediated formation of Si-Si centers, and of small Si clusters, within metastable regions of the ion-implanted oxide.

Enhancement of the Intensity of the Short-Wavelength Visible Photoluminescence from Silicon-Implanted Silicon-Dioxide Films Caused by Hydrostatic Pressure during Annealing. I.E.Tyschenko, L.Rebohle, R.A.Yankov, W.Skorupa, A.Misiuk: Applied Physics Letters, 1998, 73[10], 1418-20