Visible photoluminescence around an orange band at 580nm was observed in 300nm layers which had been implanted with Si or Ge ions at 25 or 400C. Implantation of 30keV Si was performed to doses of between 5 x 1015 and 1017/cm2 and implantation of 100keV Ge was performed to a dose of 5 x 1015/cm2. The samples which were implanted at 400C exhibited much higher luminescence intensities than did those which were implanted at room temperature. Electron spin resonance signals from hot-implanted samples indicated the presence of relatively lower numbers of non-radiative defects than those in samples which were implanted at room temperature. It was concluded that hot-implantation effectively enhanced the intensity of defect-related photoluminescence by reducing the density of non-radiative defects and by introducing radiative defects which contributed to the luminescence in the layers.

Enhancing Defect-Related Photoluminescence by Hot Implantation into SiO2 Layers. S.Im, J.Y.Jeong, M.S.Oh, H.B.Kim, K.H.Chae, C.N.Whang, J.H.Song: Applied Physics Letters, 1999, 74[7], 961-3