The properties of vacancies and host interstitials in II-VI semiconductors, as deduced from magnetic resonance studies, were reviewed. A pattern in their electronic structures was shown to follow from a simple 1-electron molecular (or atomic) orbital treatment. This explained the tendency of some of them to retain full Td symmetry while others became distorted, and highly localized in low-symmetry configurations. It was suggested that those which became distorted were candidates for migration under electronic excitation. Experimental data suggested that the entities in question were the interstitials on the 2 sub-lattices.

G.D.Watkins: Journal of Crystal Growth, 1996, 159, 338-44