It was recalled that the localization of electrons on linear defects had been investigated theoretically and experimentally for the case of dislocations in metals and semiconductors. These were mainly straight screw and edge dislocations. A gauge approach was used here in order to analyze theoretically the localization of electronic states in elastic materials with rotational topological defects. Thus, it was demonstrated that a partial wedge disclination could be described in terms of linear elasticity theory.

S.E.Krasavin, V.A.Osipov: Fizika Tverdogo Tela, 1995, 37[9], 2848-50 (Physics of the Solid State, 1995, 37[9], 1571-2)