Thermally grown oxide on Si substrates was implanted with Si+ ions to a dose of 6 x 1016/cm2 and were studied by using photoluminescence, electron paramagnetic resonance and low-frequency Raman scattering techniques. Distinct O-vacancy defects and non-bridging O hole centers were identified by electron paramagnetic resonance. The luminescence intensity in the 620nm range was found to be related to the numbers of these defects.

Optical and Electron Paramagnetic Resonance Study of Light-Emitting Si+ Ion Implanted Silicon Dioxide Layers. M.Y.Valakh, V.A.Yukhimchuk, V.Y.Bratus, A.A.Konchits, P.L.F.Hemment, T.Komoda: Journal of Applied Physics, 1999, 85[1], 168-73