A theoretical model was developed which described the isothermal annealing of semiconductors which had been partially amorphized by ion bombardment. The annealing behavior of amorphous zones was approximated by using first-order reaction kinetics. An increasing complexity of amorphousness, with fraction of material amorphized, was approximated by using a population of activated processes for which the mean activation energy increased with fractional amorphization. The model predictions were compared with the limited amount of available experimental data, and were shown to give satisfactory qualitative agreement.

G.Carter: Journal of Physics D, 1996, 29[6], 1619-23