Numerical methods were used to make self-consistent calculations of a system of diffusion equations for interstitial atoms and vacancies. Allowance was made for recombination in metallic samples that were subjected to irradiation, and an external stress. The concentration profiles of point defects around dislocations and voids were found and used in numerical calculations of the flux of interstitial atoms and vacancies to sinks. The rate of strain was calculated for various values of the temperature and sink strength, and was incorporated into a model for radiation creep. The latter took account of the gliding and climbing of dislocations past obstacles.

J.S.Pyatiletov, A.D.Lopuga: Zhurnal Tekhnicheskoi Fiziki, 1996, 66[1], 59-70 (Technical Physics, 1996, 41[1], 30-5)