A correlation was found between the bulk thermal properties of semiconductors, and the critical temperature which separated ion beam-induced epitaxial crystallization from amorphization. It was suggested that the same critical temperature, applied to a single cascade, was responsible for amorphization rather than dynamic annealing during medium-energy and high-energy implantation. Calculations confirmed the role that was played by thermal processes in the formation of as-implanted defects.

J.Gyulai, F.Paszti, E.Szilagyi: Nuclear Instruments and Methods in Physics Research B, 1995, 106[1-4], 328-32