Monocrystals of Bi2-xInxTe3, where x ranged from 0 to 0.3, were prepared by using a Bridgman technique. Hall constant, electrical conductivity and Seebeck coefficient measurements showed that an increasing x-value led to a decrease in the concentration of free charge carriers, until an inversion from p-type to n-type occurred at an x-value of about 0.1. In samples with x greater than 0.1, an increase in the concentration of free electrons was observed. This was explained by a model that was based upon the idea that substitutional defects, InBix, led to a decrease in the concentration of anti-site BiTe’ defects and a simultaneous increase in the concentration of VTe•• vacancies in the Te sub-lattice.

S.Karamazov, P.Lostak, J.Horak, R.Kuzel: Physica Status Solidi A, 1995, 148[1], 229-37