Cross-sectional transmission electron microscopic studies, of layers that had been grown onto (001)GaAs or (001)CdZnTe substrates by using a multi-layer interdiffusion process, showed that the microstructures could be related to the diffusion mechanisms which operated during annealing. Layers that were grown onto GaAs contained extrinsic loops that formed during the interdiffusion process. These persisted longer in high-Cd specimens. This implied the creation of Te interstitials. Layers which were grown onto lattice-matched CdZnTe substrates contained a network of 60-type misfit dislocations that formed at the interface between HgTe and CdZnTe. This migrated into the CdHgTe, by the width of the diffusion profile, during annealing.

I.P.Jones, T.T.Cheng, M.Aindow, J.Gough, A.Graham, J.Giess: Journal of Crystal Growth, 1996, 159, 1096-9