A model was considered for a defect which exhibited 2 distinct configurations in 2 different states of charge. Its behavior, as observed via deep-level transient spectroscopy, was considered. A general solution was obtained for the fractional occupation of the

defect in each of its possible configurations. The results were used to explain the unusual dependence of the deep-level transient spectroscopic line amplitudes as a function of the filling pulse length in ion-implanted Cd0.7Hg0.3Te.

M.Koehler, E.F.Ferrari, J.F.Barbot, I.A.Hümmelgen: Physical Review B, 1996, 53[12], 7805-9