A dislocation-related center which exhibited a large lattice relaxation was detected by using capacitance-spectroscopic, Hall effect and cathodoluminescence techniques. A new model was proposed for the interaction of dislocations with substitutional donors in II-VI and III-V compound semiconductors. According to this model, lattice distortions around dislocations led to the appearance of a non-hydrogenic donor level in the band-gap which lay in the non-distorted lattice above the bottom of the conduction band.

A.A.Istratov, O.F.Vyvenko: Solid State Phenomena, 1996, 47-48, 319-24