A comparison was made of the diffusivities of halogens in this material. Diffusion anneals were carried out, at temperatures ranging from 20 and 700C, in evacuated silica ampoules using CdI2, CdCl2 or CdBr2 sources under saturated vapor pressure conditions. The concentration profiles were measured by using radiotracer sectioning or secondary-ion mass spectrometry techniques. It was found that, in most cases, the profiles comprised 4 parts. These could be fitted by using a sum of 4 complementary error functions. The fitting procedure was only empirical, but was satisfactory for the description of the diffusion profiles and the behavior of diffusivities as a function of various parameters.

J.Malzbender, E.D.Jones, N.Shaw, J.B.Mullin: Semiconductor Science and Technology, 1996, 11[5], 741-7